Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1981-04-08
1983-10-11
Rutledge, L. Dewayne
Metal working
Method of mechanical manufacture
Assembling or joining
29590, 357 59, 156657, H01L 21308
Patent
active
044083882
ABSTRACT:
A method for manufacturing a semiconductor integrated circuit device having a plurality of bipolar transistors is characterized in that, using an antioxidant insulation film pattern as a mask, an underlying conductive layer is overetched to form a conductive layer pattern; the antioxidant insulation film pattern is of overhanging structure with respect to the conductive pattern; a first thermally oxidized film is grown on the circumferential surface of the conductive layer pattern and a second thermally oxidized film is formed on the exposed part of a semiconductor substrate or semiconductor layer; and the second thermally oxidized film on the semiconductor substrate or the semiconductor layer is anisotropicetched away using the antioxidant insulation film pattern as a mask.
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Translation of Parts of German Offenlegungsschrift No. 28 13 673 entitled "Method of Manufacturing a Semiconductor Arrangement".
Translation of an Article entitled "New Techniques in Semiconductors for the Communications Art" from 1234 Nachrichten Elektronik, vol. 32, No. 10 (Oct. 1978).
Rutledge L. Dewayne
Schiavelli Alan E.
Tokyo Shibaura Denki Kabushiki Kaisha
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