Planar semiconductor device with dual conductivity insulating la

Details Planar semiconductor device with dual conductivity insulating la Planar semiconductor device with dual conductivity insulating la

1986-04-22

1987-09-01

Clawson, Jr., Joseph E.

357 52, 357 54, 357 59, H01L 2940

Patent

active

046912240

ABSTRACT:
A planar semiconductor device having a main p-n junction surrounded by at least one guard ring covered with an insulating layer having an opening is provided with an electrode electrically connected to said guard ring through the opening. The said electrode is provided such that it does not extend beyond the end of the guard ring region which is located in an opposite side to the main p-n junction.

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Kao et al.; Proceedings of the IEEE; vol. 55; No. 8; Aug. 1967; pp. 1409-1414.

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