Process for fabrication and assembly of semiconductor devices

Details Process for fabrication and assembly of semiconductor devices Process for fabrication and assembly of semiconductor devices

1975-06-05

1976-06-29

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 29591, 29610R, B01J 1700

Patent

active

039655687

ABSTRACT:
A method of mounting a semiconductor device and making electrical connections without the use of bond wires is disclosed. In preferred form this process also includes fabrication of an IR detector array. Mesas in the mirror image of a desired array pattern are formed on the surface of a bar of IR sensitive material by etching to a depth greater than the desired final detector array thickness. A lead pattern for the desired detector array is formed on a support member with contact pads plated to a thickness greater than the final detector thickness. The bar of detector material is turned over and the etched surface bonded to the support member by means of an adhesive which also fills the area between the lead pattern contact pads and contact areas of the detector, to form a semiconductor unit. The semiconductor unit is lapped to final detector thickness to form a coplanar surface of the lead pattern contact pads, detector contact areas, and the adhesive material. An interconnect pattern is then formed on this coplanar surface to connect the detector array to the support member lead pattern to complete the semiconductor device.

REFERENCES:
patent: 3290753 (1966-12-01), Chang
patent: 3691628 (1972-09-01), Kim
patent: 3750270 (1973-08-01), Ishii

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