Hot electron unipolar transistor with two-dimensional degenerate

Details Hot electron unipolar transistor with two-dimensional degenerate Hot electron unipolar transistor with two-dimensional degenerate

1985-01-09

1987-09-01

Clawson, Jr., Joseph E.

357 16, 357 34, 357 90, H01L 2980

Patent

active

046912150

ABSTRACT:
A transistor structure has a semiconductive base layer located between an emitter and a collector, the base layer during operation having an inversion layer therein which spreads out in directions transverse to the emitter-collector current path.

REFERENCES:
patent: 4366493 (1982-12-01), Braslau et al.
patent: 4414557 (1983-11-01), Amemiya et al.
Japanese Journal of Applied Physics, vol. 23, No. 5, "Tunneling Hot Electron Transistor Using GaAs/AlGaAs Heterojunctions", N. Yokoyama et al., pp. L311-L312--May 1984.
Solid State Electronics, vol. 9, pp. 751-769, "Appraisal of Semiconductor-Metal-Semiconductor Transistor"--1966.

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