Insulator films on diamonds

Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than... – Diamond or silicon carbide

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257288, 257289, 257405, H01L 2701, H01L 2900, H01L 2978

Patent

active

053509447

ABSTRACT:
Electrical quality insulating films on n-type and p-type diamond substrates are provided in which an insulating film such as a silicon dioxide film is deposited onto the exposed face of a diamond substrate, such as by chemical vapor deposition. Forming a conducting layer atop the silicon dioxide allows the creation of a metal-oxide-silicon device with which semiconductor carriers can be controlled through the application of a bias voltage to the conductor surface.

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