Image sensor using organic photoconductor

Radiant energy – Photocells; circuits and apparatus – Photocell controlled circuit

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257448, H01J 4014

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active

053509153

ABSTRACT:
An image sensor uses an image reading element formed by integrating pixels for converting image information to an electric signal. In each of the pixels, a common electrode common to all the pixels and an individual electrode corresponding to each of the pixels are disposed through at least an organic photoconductive layer. A crosstalk capacitance of each of the pixels is equal to or smaller than 35% of a sum of an electric capacitance between individual electrodes and an output capacitance of the individual electrode. A blocking layer may be disposed between the common and individual electrodes. Each of the pixels may be constructed such that the individual electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the individual electrode, and the common electrode is arranged on the blocking and photoconductive layers. Otherwise, each of the pixels may be constructed such that the common electrode is arranged on a supporting body, and a blocking layer and the photoconductive layer are formed on the common electrode, and the individual electrode is arranged on the blocking and photoconductive layers.

REFERENCES:
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patent: 4737852 (1988-04-01), Dohkoshi et al.
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patent: 4914504 (1990-04-01), Rosan
Patent Abstracts of Japan, vol. 11, No. 179 (E-514), Jun. 9, 1987 & JP-A-62 012 157, Jan. 21, 1987.
Patent Abstracts of Japan, vol. 11, No. 150 (C-422), May 15, 1987 & JP-A-61 285 262, Dec. 16, 1986.
IEEE Transactions on Components, Hybrides and Manufacturing Technology, vol. CHMT-7, No. 4, Dec. 1984, Kouhei Suzuki, et al., "High Speed and High Resolution Contact-Type Image Sensor Using an Amorphous Silicon Photodetector Array", pp. 423-428.

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