ROM Storage location having more than two states

Details ROM Storage location having more than two states ROM Storage location having more than two states

1978-12-22

1981-06-09

Fears, Terrell W.

Static information storage and retrieval

Analog storage systems

365103, 365104, 3072388, G11C 1140, G11C 1300

Patent

active

042728304

ABSTRACT:
There is provided a read-only memory having a plurality of storage locations wherein more than one binary digit can be stored. The ROM employs field effect transistors having various gate sizes so that the current through the field effect transistors can be controlled by the gain of the transistor. The different levels of current through the different storage locations provide more than two distinct states for each storage location.

REFERENCES:
patent: 3812478 (1974-05-01), Tomisawa et al.
patent: 3971055 (1976-07-01), Avai

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