Fishing – trapping – and vermin destroying
Patent
1993-09-16
1994-09-27
Thomas, Tom
Fishing, trapping, and vermin destroying
437189, 437192, 437196, 437228, H01L 2144
Patent
active
053507126
ABSTRACT:
A first insulating layer is formed on the major surface of a semiconductor substrate, and a first-level metal wiring layer is formed on the first insulating layer. A refractory metal layer is selectively grown on that side portion (or those side and upper portions) of the first-level metal wiring layer which is (or are) located in the vicinity of a contact formation region of the first-level metal wiring layer. A second insulating layer is formed on the resultant structure, and then a through hole is formed by the RIE method in the first-level metal wiring layer in the contact formation region. The first-level metal wiring layer, or the first-level metal wiring layer and part of the refractory metal layer are exposed through the through hole. A second-level metal wiring layer is formed such that it fills the through hole, extends on part of the second insulating layer, and is electrically connected to the first-level metal wiring layer.
REFERENCES:
patent: 4968644 (1990-11-01), Gallagher et al.
patent: 5100838 (1992-03-01), Dennison
patent: 5187121 (1993-02-01), Cote et al.
patent: 5286674 (1994-02-01), Roth et al.
Kabushiki Kaisha Toshiba
Nguyen Tuan
Thomas Tom
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