Low loss semiconductor optical phase modulator

Details Low loss semiconductor optical phase modulator Low loss semiconductor optical phase modulator

1988-08-08

1990-07-24

Lee, John D.

350 9612, 350355, G02B 610, G02F 100

Patent

active

049431331

ABSTRACT:
A low loss optical waveguide modulator, an essential component of opto-electronic integrated circuits which can combine optical and electronic devices on a single chip optical communication systems is described. The modulator in our embodiment consists of a sequence of epitaxial layers on a single crystal substrate consisting of a n.sup.+ -GaAs substrate, a n.sup.+ -GaAs buffer layer, a n-Al.sub.0.05 Ga.sub.0.95 As electrode layer, an effective i-Al.sub.0.25 Ga.sub.0.75 As confinement layer, an i-GaAs guiding layer, an effective i-Al.sub.0.25 Ga.sub.0.75 As confinement layer, a p-Al.sub.0.25 Ga.sub.0.75 As electrode layer and a p.sup.+ -GaAs cap layer. The layers have an index of refraction profile such that the index of refraction of the confinement layers are substantially less than the index of refraction of the guiding layer and the index of refraction of the first electrode layer is substantially greater than the index of refraction of the first confinement layer.

REFERENCES:
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"Attenuation Measurements on MOCVD-GROWN GaAs/GaAlAs Optical Waveguides", R. G. Walker et al., Electronics Letters, vol. 19, No. 15, pp. 590-592, Jul. 21, 1983.
"Reactive Ion Etched GaAs Optical Waveguide Modulators with Low Loss and High Speed", P. Buchmann et al., Electronics Letters, vol. 20, No. 7, pp. 295-297, Mar. 29, 1984.
"Low Loss GaAs Optical Waveguides Grown by the Metalorganic Chemical Vapor Deposition Method", K. Hiruma et al., Appl. Phys. Lett., vol. 47, No. 3, pp. 186-187, Aug. 1, 1985.

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