Producing a silicon carbide structure and multidirectional silic

Details Producing a silicon carbide structure and multidirectional silic Producing a silicon carbide structure and multidirectional silic

1980-12-30

1982-04-20

Vertiz, O. R.

Chemistry of inorganic compounds

Silicon or compound thereof

Binary compound

501 88, C01B 3136, C04B 3556

Patent

active

043259308

ABSTRACT:
The method for producing a silicon carbide structure comprises the stages of immersing the carbon structure into a bath containing 20 to 40% by weight of silicon powder in suspension in a liquid medium containing 10 to 30% by weight of fugitive resin, the remainder being constituted by a resin solvent, and of drying the structure in order to obtain an easy-to-handle carbon structure coated with resin and silicon powder bonded in the resin. The structure is then subjected to a heat treatment to let the silicon react with the carbon and produce a silicon carbide structure.

REFERENCES:
patent: 3462340 (1969-08-01), Hough
patent: 3927181 (1975-12-01), Niimi et al.
patent: 4120731 (1978-10-01), Hillig et al.
patent: 4141948 (1979-02-01), Laskow et al.
patent: 4150998 (1979-04-01), Mrelock
patent: 4162301 (1979-07-01), Hamling
patent: 4238434 (1980-12-01), Enomoto et al.

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