Short channel CMOS on 110 crystal plane

Details Short channel CMOS on 110 crystal plane Short channel CMOS on 110 crystal plane

1986-07-14

1989-08-15

James, Andrew J.

357 231, 357 233, 357 60, H01L 2702, H01L 2904

Patent

active

048579866

ABSTRACT:
A monocrystalline silicon substrate having a (110) crystal plane is prepared. A CMOS transistor is formed on this substrate. An N channel MOS transistor and a P channel MOS transistor are formed in the surface of the semiconductor substrate. In each of these transistors the channel length is 1.5 .mu.m or less and the velocity saturation phenomenon of electrons is outstanding.

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