Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1997-05-21
2000-11-21
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257184, 257185, 257191, 359248, 438 93, 438 94, 385 8, 385130, 385131, H01L 31072, H01L 31109, H01L 310328, H01L 310336
Patent
active
061506672
ABSTRACT:
Disclosed is an electroabsorption-type optical modulator, which includes a semiconductor substrate; and a semiconductor buffer layer, a semiconductor optical absorption layer and a semiconductor cladding layer which are layered in order on the semiconductor substrate. The absorption of a light wave supplied to an end of the semiconductor optical absorption layer is controlled by changing the intensity of an electric field applied to the semiconductor optical absorption layer. The semiconductor optical absorption layer has a first region with an absorption-edge wave length shorter than that of a second region of the semiconductor optical absorption layer. A voltage corresponding to an external electrical signal is simultaneously applied to both regions of the semiconductor optical absorption layer, so that, to incident light, a refractive index of the semiconductor optical absorption layer is decreased and the absorption coefficient of the semiconductor optical absorption layer is increased when the intensity of the electric field applied to the semiconductor optical absorption layer corresponding to the external electrical signal is increased.
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Ishizaka Masashige
Yamazaki Hiroyuki
Mintel William
NEC Corporation
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