Radiation-sensitive semiconductor device with active screening d

Details Radiation-sensitive semiconductor device with active screening d Radiation-sensitive semiconductor device with active screening d

1988-01-26

1989-08-15

Hille, Rolf

357 55, 357 20, H01L 2714

Patent

active

048579807

ABSTRACT:
A radiation-sensitive semiconductor device has a high-ohmic semiconductor wafer with a thicker edge portion and a thinner central portion, in which a photodiode is located. The surface opposite to the photodiode is provided with a highly-doped contact layer, on which a metal layer is provided. The central portion is so thin that at a low photodiode voltage the depletion zone of the photodiode extends as far as the contact layer. According to the invention, the device includes an active screening diode, which extends both in the edge portion and in the central portion and whose depletion zone extends in the operating condition in the central portion as far as the contact layer. As a result, diffusion of charge carriers from the edge portion to the photodiode is avoided.

REFERENCES:
patent: 3081418 (1963-03-01), Manintveld et al.
patent: 3296502 (1967-01-01), Gross et al.
patent: 3716429 (1973-02-01), Napoli et al.
patent: 3794891 (1974-02-01), Takamiya

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