Hydrogen-stabilized semiconductor devices

Details Hydrogen-stabilized semiconductor devices Hydrogen-stabilized semiconductor devices

1988-12-13

1989-08-15

Carroll, J.

357 29, 357 51, 357 78, H01L 2978, H01L 2702, H01L 2336

Patent

active

048579769

ABSTRACT:
Semiconductor devices, such as silicon-base MOS devices (10) and solar cells (50), degrade as a result of a variety of reasons, such as hot carriers, photons, and ionizing radiations. Degradation in such devices is cured by the presence of atomic hydrogen. Presently, such devices are exposed to atomic hydrogen during processing. However, a source of atomic hydrogen is not available to heal damage over the lifetime of the device. In accordance with the invention, a source (34, 60) of atomic hydrogen is provided in cooperative relationship with the devices. In a preferred embodiment, the source comprises a layer of palladium, disposed at an appropriate location. The palladium is charged with atomic hydrogen during packaging or encapsulating by exposure to a hydrogen-containing species. The palladium cracks the species to generate atomic hydrogen, which it stores and provides to the device on a real-time basis.

REFERENCES:
patent: 4042946 (1977-08-01), Sokoloski
patent: 4196438 (1980-07-01), Carlson
I. Lundstrom et al., "A Hydrogen-Sensitive MOS Feed-Effect Transistor", Applied Physics Letters, vol. 26, No. 2, (Jan. 15, 1975), pp. 55-57.

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