Semiconductor light-emitting device having a cladding layer comp

Details Semiconductor light-emitting device having a cladding layer comp Semiconductor light-emitting device having a cladding layer comp

1993-01-29

1994-06-14

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

372 45, 372 46, H01S 319

Patent

active

053217128

ABSTRACT:
A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.

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