Spin-valve type magnetoresistive thin film element and its manuf

Details Spin-valve type magnetoresistive thin film element and its manuf Spin-valve type magnetoresistive thin film element and its manuf

1998-09-16

2000-11-21

Kiliman, Leszek

Stock material or miscellaneous articles

Composite

Of inorganic material

428694R, 428694T, 428900, 427128, 427130, 427131, 360113, 360126, 338 32R, 324252, G11B 566

Patent

active

061500453

ABSTRACT:
The pinned magnetic layer 2 is composed of a track width region 2' and a dead region 2", the track width region 2' being formed at a spaced apart relation to the bias region 5. Accordingly, magnetization of the track width region 2' is not so strongly affected by the bias region 5, thereby magnetization is fixed along the Y-direction at almost entire region of the track width region 2'. Therefore, the track width region 2' and the free magnetic region are in a crossing relation with each other giving a proper asymmetry in the entire region of the track width region 2'.

REFERENCES:
patent: 5018037 (1991-05-01), Krounbi et al.
patent: 5079035 (1992-01-01), Krounbi et al.
patent: 5159513 (1992-10-01), Dieny et al.
patent: 5206590 (1993-04-01), Dieny et al.
patent: 5373238 (1994-12-01), McGuire et al.
patent: 5869963 (1999-02-01), Saito
patent: 5972420 (1999-10-01), Saito

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