Patent
1989-12-05
1991-07-02
Munson, Gene M.
357 30, 357 55, H01L 2978
Patent
active
050293214
ABSTRACT:
A solid state image sensing device comprises photoelectric converting portions (8) and charge coupled portions. A plurality of parallel trenches (2) are formed on a main surface of a semiconductor substrate (1). Photoelectric converting portions are on the surfaces of the semiconductor substrate on both sides of each of the trenches. Charge transfer portions corresponding to the photoelectric converting portions are independently formed on the side surfaces of the trenches. Insulating and isolating regions (15, 29, 30) are formed on the bottom portions of the trenches. By providing two independent charge transfer portions in one trench, the area occupied by the charge transfer portions can be reduced.
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Walden et al. "The Buried Channel Charge Coupled Device", pp. 1635-1640, Bell System Technical Journal, Apr. 1990.
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Mitsubishi Denki & Kabushiki Kaisha
Munson Gene M.
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