Solid state image sensing device formed of charge coupled device

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357 30, 357 55, H01L 2978

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active

050293214

ABSTRACT:
A solid state image sensing device comprises photoelectric converting portions (8) and charge coupled portions. A plurality of parallel trenches (2) are formed on a main surface of a semiconductor substrate (1). Photoelectric converting portions are on the surfaces of the semiconductor substrate on both sides of each of the trenches. Charge transfer portions corresponding to the photoelectric converting portions are independently formed on the side surfaces of the trenches. Insulating and isolating regions (15, 29, 30) are formed on the bottom portions of the trenches. By providing two independent charge transfer portions in one trench, the area occupied by the charge transfer portions can be reduced.

REFERENCES:
patent: 4234887 (1980-11-01), Vanderslice
patent: 4672410 (1987-06-01), Miura et al.
patent: 4760273 (1988-07-01), Kimata
patent: 4837606 (1989-06-01), Goodman et al.
patent: 4878102 (1989-10-01), Bakker et al.
L. G. Heller, IBM Technical Disclosure Bulletin vol. 22, No. 11, 4/1980.
Walden et al. "The Buried Channel Charge Coupled Device", pp. 1635-1640, Bell System Technical Journal, Apr. 1990.
Boyle et al. "Charge Coupled Semiconductor Devices", pp. 587-593, Bell System Technical Journal, Apr. 1990.

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