Optically compensated bipolar transistor

Details Optically compensated bipolar transistor Optically compensated bipolar transistor

1990-02-28

1991-07-02

Nelms, David C.

Radiant energy

Photocells; circuits and apparatus

Photocell controlled circuit

250238, 307310, H01J 4014

Patent

active

050292773

ABSTRACT:
A method for temperature compensation of a bipolar transistor through optically-induced carrier density enhancement. In response to the output of a temperature sensor, the optical output power of a photon source directed toward the bipolar transistor to be compensated is varied. Photons incident on the semiconductor surface effect variations in supplemental carrier concentration that maintain junction potential of the bipolar transistor at a predetermined level.

REFERENCES:
patent: 3421009 (1969-01-01), Caruthers
patent: 3705316 (1972-12-01), Burrous et al.
patent: 4694157 (1987-12-01), Mishina
patent: 4710631 (1987-12-01), Aotsuka et al.
patent: 4725723 (1988-02-01), Shimojima
patent: 4812635 (1989-03-01), Kaufmann et al.
patent: 4841170 (1989-06-01), Eccleston

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