Fabrication process for MOSFET using oblique rotation ion implan

Details Fabrication process for MOSFET using oblique rotation ion implan Fabrication process for MOSFET using oblique rotation ion implan

1995-12-22

1998-04-07

Niebling, John

Fishing, trapping, and vermin destroying

437 35, 437953, H01L 21265

Patent

active

057364168

ABSTRACT:
A P-type diffusion layer for buried channel is formed on the surface of N-well immediately below a gate electrode, then a side wall spacer is formed at the side surface of the gate electrode. Subsequently, with taking the gate electrode and the side wall spacer as mask, phosphorous ion is implanted to the N-well by oblique rotating ion implantation and boron fluoride ion is implanted by perpendicular ion implantation. Then, phosphorous ion and boron fluoride ion are activated by heat treatment to form high density P-type diffusion layer and P-type diffusion layer for buried channel.

REFERENCES:
patent: 3734787 (1973-05-01), Dhaka et al.
patent: 5270226 (1993-12-01), Hori et al.
patent: 5340756 (1994-08-01), Nagayasu
patent: 5362982 (1994-11-01), Hirase et al.
patent: 5413945 (1995-05-01), Chien et al.
patent: 5416038 (1995-05-01), Hsue et al.
patent: 5532508 (1996-07-01), Kaneko et al.
patent: 5538909 (1996-07-01), Hsu
S. Odanaka et al., "A New Half-Micron p-Channel MOS FET with Efficient Punchthrough Stops", VLSI Symposium 1985, pp. 62-63 Month Unknown.
T. Hori et al., "Deep-Submicrometer Large-Angle Tilt Implanted Drain (LATID) Technology", IEEE Transactions on Electron Devices, vol. 39, No. 10, Oct. 1992, pp. 2312-2324.
T. Hori, "A New p-Channel MOSFET with Large-Tile-Angle Implanted Punchthrough Stopper (LATIPS)", IEEE Electron Devices Letters, vol. 9, No. 12, Dec. 1988, pp. 641-643.
T. Hori, "A 0.1-.mu.m CMOS Technology with Tilt-Implanted Punchthrough Stopper (TIPS)", International Electron Devices Meeting 1994, Technical Digest, Dec. 11-14, 1994, pp. 75-78.

Affiliated with

Also associated with

Rating

Fabrication process for MOSFET using oblique rotation ion implan does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication process for MOSFET using oblique rotation ion implan, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication process for MOSFET using oblique rotation ion implan will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-12539