Crimp-type semiconductor device having non-alloy structure

Details Crimp-type semiconductor device having non-alloy structure Crimp-type semiconductor device having non-alloy structure

1990-12-26

1992-08-18

Hille, Rolf

357 76, 357 79, 357 38, 357 39, H01L 2302, H01L 2332, H01L 2342, H01L 2974

Patent

active

051404060

ABSTRACT:
A gate turn-off thyristor of the crimp and anode shortcircuit type includes a semiconductor pellet having anode, cathode and gate electrodes formed on each of first and second main surfaces thereof, with the gate electrode entering into the cathode electrodes. First and second electrode members are positioned sandwiching the semiconductor pellet between them and opposing to the electrodes. First and second electrode posts are positioned sandwiching the semiconductor pellet and the electrode members between them and opposing to the electrode members. Those faces of the electrodes, electrode members and electrode posts which are opposed to one another are not fixed but contact-pressed to one another. The semiconductor pellet has at the outer rim portion thereof a region where no current flows. The outer rim of each of the electrode member and post terminates on the region through which no current flows.

REFERENCES:
patent: 4402004 (1983-08-01), Iwasaki
patent: 4996586 (1991-02-01), Matsuda et al.
Becke et al., "Investigations of Gate Turn-Off Structures," IEDM Technical Digest, pp. 649-653, 1980.

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