Semiconductor device and method of forming the same

Details Semiconductor device and method of forming the same Semiconductor device and method of forming the same

1998-12-28

2000-08-29

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257706, 257707, 257780, 257783, 257784, 257787, 257793, H01L 2352, H01L 2310, H01L 2334

Patent

active

061113115

ABSTRACT:
The present invention provides a semiconductor package comprising: an electrically conductive base plate having a first surface comprising first, second and third regions; a semiconductor chip provided on the first region of the electrically conductive base plate and the semiconductor chip having at least a first electrode and at least a second electrode; an insulation layer provided on the third region of the electrically conductive base plate; and an electrically conductive thin film pattern laminated on the insulation layer and the electrically conductive thin film pattern being electrically connected to the first electrode of the semiconductor chip, so that the electrically conductive thin film pattern and the first electrode have a first variable potential, wherein the second electrode is connected directly to the second region of the electrically conductive base plate so that the second electrode and the electrically conductive base plate has a second fixed potential which is different from the first variable potential.

REFERENCES:
patent: 5225709 (1993-07-01), Nishiuma et al.
patent: 5420460 (1995-05-01), Massingill
patent: 5490324 (1996-02-01), Newman
patent: 5581122 (1996-12-01), Chao et al.
patent: 5640047 (1997-06-01), Nakashima
patent: 5672909 (1997-09-01), Glenn et al.
patent: 5701032 (1997-12-01), Fischer et al.
patent: 5721454 (1998-02-01), Palmer
patent: 5798571 (1998-08-01), Nakajima

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