Complementary bipolar complementary CMOS (CBiCMOS) transmission

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 15, 357 20, 357 34, 357 41, 357 42, 357 44, 307570, 307571, 307575, 307576, 307577, H01L 2702, H01L 2948, H01L 2972

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050289780

ABSTRACT:
A CBiCMOS transmission gate in which the sources of a CMOS transistor pair are connected to an input and the drains are connected to the bases of a complementary bipolar transistor pair. The bipolar transistor pair is serially connected between a plus voltage potential and ground whereby a logic one applied to the input is transmitted through the PMOS transistor to the base of an NPN transistor which applies the plus voltage to an output terminal, and a logic zero applied to the input is transmitted to the NMOS transistor to the base of a PNP transistor to apply ground to the output terminal.

REFERENCES:
patent: 4794441 (1988-12-01), Sugawara et al.
patent: 4920399 (1990-04-01), Hall
patent: 4967246 (1990-10-01), Tanaka

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