Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1998-10-01
2000-08-29
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
H01L 213065
Patent
active
061108359
ABSTRACT:
A semiconductor fabrication method is provided for fabricating an electrode structure for a cylindrical capacitor in integrated circuit, which can allow the resultant electrode structure to be formed substantially without having horn-like portions such that the leakage current in the capacitor can be minimized. The method includes the following steps of: forming an insulating layer over the substrate; forming a contact window in the insulating layer at a predefined location; forming a first conductive layer over the insulating layer, which fills the entire contact window; forming a mask layer over the first conductive layer; forming a second conductive layer at a predefined location over the mask layer substantially directly above the contact window; forming a sidewall spacer on the sidewall of the second conductive layer; removing the entire second conductive layer; and performing an etching process utilizing the sidewall spacer as mask so as to remove a selected part of the first conductive layer, with the remaining part of the first conductive layer serving as the desired electrode structure.
REFERENCES:
patent: 5858829 (1999-01-01), Chen
patent: 5946571 (1999-08-01), Hsue et al.
Hu Cheng-Shuen
Wang Chuan-Fu
Wu King-Lung
Huang Jiawei
Patents J. C.
Umez-Eronini Lynette T.
United Microelectronics Corp.
Utech Benjamin L.
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