Method for fabricating a trench isolation

Details Method for fabricating a trench isolation Method for fabricating a trench isolation

1998-10-14

2000-08-29

Niebling, John F.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438432, 438435, 438427, H01L 2176

Patent

active

061108006

ABSTRACT:
A method to form a shallow trench isolation (STI) structure includes forming a trench on a semiconductor substrate. Then a channel stop is formed under the trench. A pad oxide layer and a silicon nitride layer are sequentially formed over the substrate. A side-wall spacer is formed over the silicon nitride layer on each side of the trench. An oxidation process is performed to oxidize the side-wall spacer. Another side-wall spacer and oxidation are repeatedly performed until the trench is filled with oxide. An oxide layer is formed over the substrate. Then an active ion etching process is performed to remove the layers above the substrate other than the trench region. The STI structure then is formed.

REFERENCES:
patent: 4471525 (1984-09-01), Sasaki

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