Method for forming a semiconductor film by sputter deposition in

Details Method for forming a semiconductor film by sputter deposition in Method for forming a semiconductor film by sputter deposition in

1991-12-20

1994-06-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437234, 20419225, H01L 2100, H01L 2102, H01L 21469

Patent

active

053209842

ABSTRACT:
There is disclosed a method for forming a semiconductor film having a high electrical conductivity on a substrate at a low temperature below 200.degree. C. with high productivity by sputtering. For example, the sputtering process is carried out within an inert atmosphere consisting of an inert gas such as argon and hydrogen. The substrate is electrically insulated (floating) from the surroundings. The distance between the substrate and a target is set to a large value. Preferably, the ratio of the partial pressure of the hydrogen to the total pressure is 30 % or more. The target consists of a semiconductor doped with an impurity that imparts one conductivity type to the semiconductor, in the case where a semiconductor film containing an impurity that imparts the conductivity type to the semiconductor film is formed on the substrate. This impurity is for example a group III or V element.

REFERENCES:
patent: 3616401 (1971-10-01), Cunningham et al.
patent: 3844924 (1974-10-01), Cunningham et al.
patent: 4716340 (1987-12-01), Lee et al.

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