Method for forming bipolar transistor input protection

Details Method for forming bipolar transistor input protection Method for forming bipolar transistor input protection

1992-01-21

1992-08-18

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 60, 437904, 437918, 148DIG11, H01L 21265

Patent

active

051399598

ABSTRACT:
A protective circuit for an input to a bipolar transistor (10) capable of operating in the microwave frequency range. In a first embodiment, a polysilicon diode (24) is connected across a base-emitter junction of the bipolar transistor (10). In a second embodiment, a polysilicon resistor (38) is connected in series with an emitter of the bipolar transistor (10), and the polysilicon diode (24) is connected across the series combination of the base-emitter junction and the polysilicon resistor (38). The layout of the transistor (10) and the islands of polysilicon (23, 25) housing the diode is critical since the bipolar transistor (10) is capable of operating in the microwave frequency range. In a first layout, an island of polysilicon (25) is centered between two transistor regions (47 and 48). In an exterior diode layout, a transistor region (51) is centered between two islands of polysilicon (23 and 25).

REFERENCES:
patent: 4616404 (1986-10-01), Wang et al.
patent: 4897757 (1990-01-01), Tailliet et al.
patent: 5010380 (1991-04-01), Avery
patent: 5045483 (1991-09-01), Delong et al.

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