Semiconductor device comprising composite barrier layer

Details Semiconductor device comprising composite barrier layer Semiconductor device comprising composite barrier layer

1995-05-15

1996-10-15

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257754, 257751, 257763, 257915, 257770, 257767, 257740, H01L 2348, H01L 2946, H01L 2962, H01L 2954

Patent

active

055657087

ABSTRACT:
A semiconductor device comprising conductors electrically connected through a contact hole interlayer insulation layer with a trilayer barrier layer comprising a titanium silicide layer, titanium silicide layer formed on the titanium silicide by collimation sputtering, and a thermally nitrided titanium formed on the titanium nitride layer. The use of a trilayer barrier layer enables through the capacity of the collimation sputtering apparatus to be increased, prevents particles from occurring, and formation of a low resistance electrical connection between conductors, in addition to preventing diffusion from the titanium nitride layer and the second titanium layer to the thermally nitrided titanium layer, and between conductors.

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patent: 5414301 (1995-05-01), Thomas
patent: 5430328 (1995-07-01), Hsue

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