Thyristor having controllable emitter short circuits and a metho

Details Thyristor having controllable emitter short circuits and a metho Thyristor having controllable emitter short circuits and a metho

1981-04-09

1984-06-12

Edlow, Martin H.

357 23, 357 86, H01L 2974, H01L 2978

Patent

active

044545274

ABSTRACT:
A thyristor which has outer emitter layers of opposite conductivity types and intermediate base layers of respective opposite conductivity types and metal-insulated-semiconductor emitter short circuit structures including a semiconductor region inserted in one of the outer emitters and doped opposite thereto and connected to the electrode carried thereby has an electrically conductive coating, connected to a terminal, carried on the boundary surface of the semiconductor body which contains the emitter layer having the MIS structure, a lateral zone of the conductive coating being insulated from the boundary surface and forming a gate electrode of the MIS structure and another zone which contacts the boundary surface and forms the trigger electrode.

REFERENCES:
patent: 3891866 (1975-06-01), Okuhara et al.
patent: 4224634 (1980-09-01), Svedberg
patent: 4244000 (1981-01-01), Ueda et al.
Munoz-Yague et al., "Optimum Design of Thyristor G-to-Emitter Geometry," IEEE Trans. on Electron Devices, vol. ED-23, No. 8, Aug. 1976.

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