Superconductor technology: apparatus – material – process – High temperature – per se – Having tc greater than or equal to 150 k
Patent
1988-12-20
1991-07-02
Ryan, Patrick J.
Superconductor technology: apparatus, material, process
High temperature , per se
Having tc greater than or equal to 150 k
505701, 505702, 505703, 505704, 428209, 428409, 428426, 428432, 428433, 428457, 428688, 428901, 428930, B32B 900
Patent
active
050285831
ABSTRACT:
Improvement in a superconducting thin film of compound oxide represented by the formula: LnBa.sub.2 Cu.sub.3 O.sub.7- .delta. (Ln is lanthanide) or (La.sub.1-x .alpha..sub.x).sub.2 CuO.sub.4 (.alpha. is Ba or Sr) deposited on a substrate or core made of MgO, SrTiO.sub.3 or ZrO.sub.2 by physical vapor deposition technique, the surface roughness R.sub.max (datum length=1,000 .mu.m) of the superconducting thin film being less than 0.2 .mu.m.
REFERENCES:
Applied Physics Letters, 51(11) pp. 861-3--Epitaxial Ordering of oxide SC Thin Films on (100) SrTiO.sub.3 prepared by pulsed laser evaporation Wu et al. (7-87), Rutgers University.
Thin Film Synthesis of the High-T.sub.c Oxide Superconductor YBa.sub.2 Cu.sub.3 O.sub.7 by Electron Beam Codepostion, Naito et al.; Dept. of App. Phys., Stanford Univ.
Higaki Kenjiro
Itozaki Hideo
Jodai Tetsuji
Tanaka Saburo
Yazu Shuji
Ryan Patrick J.
Sumitomo Electric Industries Ltd.
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