Method for making low tuning rate single mode PbTe/PbEuSeTe buri

Details Method for making low tuning rate single mode PbTe/PbEuSeTe buri Method for making low tuning rate single mode PbTe/PbEuSeTe buri

1990-01-23

1991-07-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG63, 148DIG95, 437105, 437108, 437133, 437936, 437965, H01L 2120

Patent

active

050285637

ABSTRACT:
A PbTe/PbEuSeTe buried heterostructure tunable diode laser and array and the method for making the same. The active region layer is buried between two lead salt semiconductor layers containing europium and selenium that are mutually of opposite conductivity type and have substantially the same lattice constant as the active region layer. In addition, the europium and selenium containing lead chalcogenide layers have an energy band gap greater than the active buried layer and an index of refraction less than the active layer. The buried structure enhances electrical and optical confinement, reduces threshold currents, and provides a stable single mode laser. Strontium, calcium or tin may be used in place of the europium. The buried laser and array are produced using a two-step molecular beam epitaxy method.

REFERENCES:
patent: 4121177 (1978-10-01), Tsukada
patent: 4190813 (1980-02-01), Logan et al.
patent: 4230997 (1980-10-01), Hartman et al.
patent: 4366568 (1982-12-01), Shimizu et al.
patent: 4603420 (1986-07-01), Nishizawa et al.
patent: 4747108 (1988-05-01), Partin
Partin, "Lead-Europium-Selenide-Telluride Grown by Molecular Beam Epitaxy," J. Electron. Mat., vol. 13, No. 3, 1984, pp. 493-504.
Temkin et al., "High-Speed Distributed Feedback Lasers . . . ", Appl. Phys. Lett., 53(13), 26 Sep. 1988, pp. 1156-1158.
Kishino et al., ". . . Mesa Substrate Buried Heterostructure GaInAsP/InP Lasers . . . ", IEEE J. Quan. Electron., vol. QE-16, No. 2, Feb. 1980, pp. 160-164.
Tanaka et al., ". . . Double-Heterostructure Lasers Fabricated by Molecular Beam Epitaxy", Jpn. J. Appl. Phys., vol. 24, No. 2, Feb. 1985, pp. L89-L90.
Kasemset et al., "Longitudinal Mode Behavior of PbSnTe Buried Heterostructure Lasers", Appl. Phys. Lett., 30(11), Dec. 1, 1981, pp. 872-874.

Affiliated with

Also associated with

Rating

Method for making low tuning rate single mode PbTe/PbEuSeTe buri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making low tuning rate single mode PbTe/PbEuSeTe buri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making low tuning rate single mode PbTe/PbEuSeTe buri will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1247032