Fishing – trapping – and vermin destroying
Patent
1989-08-17
1991-07-02
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 29, 437 45, 437 56, 437 57, 437913, 148DIG82, H01L 2122
Patent
active
050285521
ABSTRACT:
A method of manufacturing an insulated-gate type field effect transistor includes the steps of forming an insulating film, on a semiconductor substrate, forming a polycrystalline silicon layer on the insulating film, forming a masking layer on the polycrystalline silicon layer, patterning the polycrystalline silicon and masking layers to form a gate electrode and a masking layer, doping an impurity of a first conductivity type in the semiconductor substrate using the gate electrode and the masking layer as masks, thereby forming a source region and a drain region, removing the masking layer, and ion-implanting an impurity of a second conductivity type in a region of the semiconductor substrate under the gate electrode through the gate electrode, thereby forming a channel-doped region. In this method, after the source and drain regions are formed, the impurity of the second conductivity type is ion-implanted in the substrate through the thin gate electrode to form the channel-doped region.
REFERENCES:
patent: 4033797 (1977-07-01), Dill et al.
patent: 4649629 (1987-03-01), Miller et al.
patent: 4717683 (1988-01-01), Parrillo et al.
Hearn Brian E.
Kabushiki Kaisha Toshiba
Nguyen Tuan
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