Method of manufacturing a planar semiconductor device having a g

Details Method of manufacturing a planar semiconductor device having a g Method of manufacturing a planar semiconductor device having a g

1990-06-26

1991-07-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 75, 437904, 437 7, 437 8, 148DIG13, 148DIG70, 357 52, H01L 2104

Patent

active

050285483

ABSTRACT:
A method of manufacturing a semiconductor device of the "planar" type comprising a highly doped substrate having a doping concentration c.sub.o and an epitaxial surface layer having a carrier concentration c<c.sub.o, in which are formed a main pn junction having a depth x.sub.j and a structure of floating guard rings. According to the invention, this device also includes between the substrate and the epitaxial surface layer, a second epitaxial layer having a carrier concentration c' such that c.sub.o >c'>c. This permits the production of devices with different maximum operating voltages using the same configuration of guard rings.

REFERENCES:
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 3978511 (1976-08-01), Digoy
patent: 4573064 (1986-02-01), McLevige et al.
patent: 4573066 (1986-02-01), Whight
patent: 4594602 (1986-06-01), Iimura et al.

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