Coherent light generators – Particular active media – Semiconductor
Patent
1985-01-22
1988-01-05
Davie, James W.
Coherent light generators
Particular active media
Semiconductor
357 17, 372108, H01S 319
Patent
active
047180706
ABSTRACT:
A method and apparatus for forming a monolithic surface emitting laser diode array by providing vertical partly light transmissive mirror surfaces opposite parabolic light reflective mirror surfaces formed adjacent the active buried layer of a heterostructure diode laser. The mirror surfaces are preferably formed using a mass-transport heating process. Other mirror shapes may be formed in accordance with the invention.
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Iga et al, "C.W. Operation of GaInAsP/InP Laser with Chemically Etched Mirror", Electronics Leters, vol. 16, No. 22, 23 Oct. 1980, pp. 830-832.
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"Room-Temperature Pulsed Oscillation of GaAlAs/GaAs Surface Emitting Injection Laser", K. Iga et al., Appl. Phys. Lett., 45(4), 15 Aug. 1984, pp. 348-350.
"Heterostructure Injection Lasers", Morton B. Panish, Proceedings of the IEEE, vol. 64, No. 10, Oct. 1976, pp. 1528-1529.
"New 1.5 .mu.m Wavelength GalnAsP/InP Distributed Feedback Laser", Y. Itaya et al., Electronics Letters, 11th Nov. 1982, vol. 18, No. 23, pp. 1006-1008.
"A Novel Double-Heterostructure p-n-Junction Laser", A. J. Spring Thorpe, Appl. Phys. Lett., vol. 31, No. 8, Oct. 15, 1977, pp. 524-525.
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Liau Zong-Long
Walpole James N.
Davie James W.
Massachusetts Institute of Technology
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