Process for forming retrograde profiles in silicon

Details Process for forming retrograde profiles in silicon Process for forming retrograde profiles in silicon

1994-10-27

1996-10-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 19, 437908, H01L 2126, H01L 21268, H01L 21306, H01L 2142

Patent

active

055653774

ABSTRACT:
A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

REFERENCES:
patent: 4617066 (1986-10-01), Vasudev
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5391903 (1995-02-01), Strater et al.
patent: 5409857 (1995-04-01), Watanabe et al.

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