Method of fabricating an isolation region in a semiconductor dev

Details Method of fabricating an isolation region in a semiconductor dev Method of fabricating an isolation region in a semiconductor dev

1994-03-11

1996-10-15

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 3, H01L 3118, H01L 2170, H01L 2700

Patent

active

055653731

ABSTRACT:
The present invention provides a novel method for fabricating an isolation region involved in a semiconductor device. An active region of a first conductivity type is selectively formed in a predetermined area in a semiconductor layer of a second conductivity type. A metal film over said active region is selectively formed without use of any heat treatment to prevent said active region from suffering any damage due to heat treatment. A selective ion-implantation of an impurity of the second conductivity type is carried out by use of said metal film as a mask to form an isolation region of a higher impurity concentration than an impurity concentration of said second conductivity type semiconductor layer.

REFERENCES:
patent: 4895520 (1990-01-01), Berg
patent: 4956306 (1990-09-01), Fuller et al.
patent: 5385849 (1995-01-01), Nakashiba

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