Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-08-09
1999-01-19
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
47 95, C30B 2502
Patent
active
058610596
ABSTRACT:
Atomic hydrogen is mixed with a raw material gas such as disilane in the selective growth of epitaxial silicon using insulating film masks, so as to control facet formation at the end portion of the selectively grown film where the silicon film comes in contact with the insulating film sidewall. Adsorption of atomic hydrogen leads to hydrogen termination of the silicon surface which remarkably reduces the surface free energy, thereby eliminating anisotropy of surface free energy and forming a facet-free selective silicon epitaxial film. A selective epitaxial film sufficiently thick for shallow junction source/drain regions of MOSFETs can be formed under the selective silicon epitaxial growth condition, i.e., high substrate temperature (700.degree. C. or higher) and low disilane flow rate, with the flow rate of hydrogen set to 4 sccm or more, and at least 5% of said hydrogen gas being dissociated into atomic hydrogen.
REFERENCES:
patent: 4361461 (1982-11-01), Chang
"Facet formation of silicon selective epitaxial layer by Si ultrahigh vacuum chemical vapor deposition". T. Aoyama et al ., Journal of Crystal Growth 136(1994) pp. 349-354.
Garrett Felisa
NEC Corporation
LandOfFree
Method for selective growth of silicon epitaxial film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for selective growth of silicon epitaxial film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for selective growth of silicon epitaxial film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1244258