Semiconductor visible image storage device

Electrical transmission or interconnection systems – Personnel safety or limit control features – Interlock

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340173LM, 340173LT, 357 26, 357 30, 358213, H01L 2720, H01L 3100

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040285650

ABSTRACT:
An improved optical storage device capable of storing optical images in a charge pattern in a high-resistivity piezoelectric semiconductor layer on a semiconductor substrate. A semiconductor substrate, coated with a layer of electrically insulating material, has a layer of high-resistivity piezoelectric semiconductor covering the insulating layer and covered by a semitransparent biasing electrode. When a negative bias is applied to the electrode, and an optical pattern applied through the electrode, slow states are charged in a short interval to store, for long periods, a pattern imaged by the light. The optical pattern can then be read by using acoustic surface wave imaging techniques to provide electrical imaging of the stored optical pattern.

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Khuri-Yakub et al., Appl. Phys. Lett. vol. 25, No. 4, 15 Aug. 1974, pp. 188-190.

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