Monolithically integrated semiconductor circuit with transistors

Details Monolithically integrated semiconductor circuit with transistors Monolithically integrated semiconductor circuit with transistors

1983-09-19

1985-10-22

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307304, H03F 342

Patent

active

045490961

ABSTRACT:
Monolithically integrated semiconductor circuit with transistors, the semiconductor circuit proper having elements thereof formed on the front side of a semiconductor chip, the latter also having at the surface thereof two supply terminals actable upon by a respective supply potential and connected, on the one hand, to the elements of the semiconductor circuit proper and, on the other hand, to an additional circuit part for generating a substrate bias applied to a substrate region occupying the rear side of the semiconductor chip and, respectively, to at least one semiconductor zone belonging to the semiconductor circuit proper and to a gate electrode on the front side of the semiconductor chip which controls the semiconductor zone and is insulated therefrom, including a series connection of the substrate bias generator and the semiconductor circuit proper dividing a voltage present at the two supply terminals of the semiconductor chip in a manner that a reference potential required for the semiconductor circuit proper is produced.

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Mead & Conway, Introduction to VLSI Systems, Addison-Wesley Pub. Co., Reading, Mass., 1980, pp. 5-8, 11-12, 233-236.
Millman & Halkias, Integrated Electronics: Analog and Digital Circuits and Systems, McGraw-Hill Book Co., New York, N.Y., 1972, pp. 447-483.

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