Integrated circuit using an insulated gate field effect transist

Details Integrated circuit using an insulated gate field effect transist Integrated circuit using an insulated gate field effect transist

1977-11-22

1979-05-08

Wojciechowicz, Edward J.

357 90, H01L 2978

Patent

active

041539060

ABSTRACT:
This disclosure relates to an integrated circuit using an insulated gate field effect transistor of the punch-through type for use in high speed electronic computation. Until now the punch-through phenomena has been considered a defect in the insulated gate field effect transistor. However, the effective utilization of the punch-through phenomena is achieved by using a specially designed insulated gate field effect transistor having a selected structure or material.

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