Semiconductor light-emitting device

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357 17, 357 61, 357 4, H01L 2916

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041539052

ABSTRACT:
A semiconductor light-emitting device comprising a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on the substrate, and a layer of semiconductor-type aluminum nitride, deposited on the semiconductor gallium nitride layer and forming an injecting heterojunction therewith. The device emits bright blue light.

REFERENCES:
patent: 3783353 (1974-01-01), Pankove
patent: 3819974 (1974-06-01), Stevenson
patent: 3849707 (1974-11-01), Braslau
patent: 3852796 (1974-12-01), Cuomo
patent: 3865655 (1975-02-01), Pankove
patent: 3869322 (1975-04-01), Cuomo
patent: 3922703 (1975-11-01), Pankove
patent: 4095331 (1978-06-01), Rutz
Rutz, I.B.M. Tech. Discl. Bull., vol. 19, No. 10, Mar. 1977, p. 4049.

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