1978-03-28
1979-05-08
Edlow, Martin H.
357 17, 357 61, 357 4, H01L 2916
Patent
active
041539052
ABSTRACT:
A semiconductor light-emitting device comprising a sapphire substrate, an epitaxial layer of monocrystalline semiconductor p-type gallium nitride deposited on the substrate, and a layer of semiconductor-type aluminum nitride, deposited on the semiconductor gallium nitride layer and forming an injecting heterojunction therewith. The device emits bright blue light.
REFERENCES:
patent: 3783353 (1974-01-01), Pankove
patent: 3819974 (1974-06-01), Stevenson
patent: 3849707 (1974-11-01), Braslau
patent: 3852796 (1974-12-01), Cuomo
patent: 3865655 (1975-02-01), Pankove
patent: 3869322 (1975-04-01), Cuomo
patent: 3922703 (1975-11-01), Pankove
patent: 4095331 (1978-06-01), Rutz
Rutz, I.B.M. Tech. Discl. Bull., vol. 19, No. 10, Mar. 1977, p. 4049.
Charmakadze Revaz A.
Chikovani Rafael I.
LandOfFree
Semiconductor light-emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor light-emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor light-emitting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1235866