Semiconductor device having a high breakdown voltage junction ch

Details Semiconductor device having a high breakdown voltage junction ch Semiconductor device having a high breakdown voltage junction ch

1977-10-03

1979-05-08

Wojciechowicz, Edward J.

357 89, 357 90, 357 91, H01L 2990

Patent

active

041539044

ABSTRACT:
A semiconductor device having a p-n junction characterized by low electric field crowding and a resulting high avalanche breakdown voltage requirement. The semiconductor device is comprised of a semiconductor substrate having impurity atoms of one type and a first surface. A first doped region lies in said substrate at said first surface and has dopant atoms of a type opposite to said one type. A second doped region lies in said substrate at said first surface adjacent the entire perimeter of said first doped region. The second doped region extends laterally away from said first doped region, and has dopant atoms of the same type as and of less density than said dopant atoms of said first doped region.

REFERENCES:
patent: 3663874 (1972-05-01), Fukukawa et al.
patent: 3814997 (1974-06-01), Takahashi et al.
patent: 3914781 (1975-10-01), Matsushita et al.

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