Laser treatment of silicon nitride

Electric heating – Metal heating – By arc

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219121LF, B23K 2600

Patent

active

045490643

ABSTRACT:
An argon-fluorine (ArF) excimer laser is used to selectively heat various Si.sub.3 N.sub.4 materials used in the manufacture of semiconductor devices to elevated temperatures while maintaining active device regions and electrical interconnects at relatively low temperatures, to, for example, anneal the structural layer, induce compositional changes or densification and/or flow of the silicon nitride-based material to round off sharp edges and stops, all without damaging or appreciably affecting the active regions and electrical interconnects of a semiconductor device.

REFERENCES:
patent: 4341569 (1982-07-01), Yaron et al.

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