Patent
1983-06-30
1986-06-03
James, Andrew J.
357 61, 357 63, 357 65, 357 71, H01L 2348
Patent
active
045933073
ABSTRACT:
This invention relates generally to ohmic contacts to substrates made of III-V compounds and to a process for fabricating such contacts. More specifically, the invention is directed to a contact to gallium arsenide having a given level of n-type dopant therein, a region of the substrate doped with germanium and a layer of a germanide of a refractory metal selected from the group consisting of molybdenum, tungsten and tantalum disposed on the substrate. Still more specifically, the invention relates to an ohmic contact to gallium arsenide which includes an interface region of germanium heavily doped with arsenic disposed between the region doped with germanium and the layer of germanide. The contact is formed by evaporating germanium and a refractory metal selected from the group consisting of molybdenum, tungsten and tantalum on the surface of an n-type gallium arsenide substrate and sintering the substrate in a reducing atmosphere for a time and at a temperature sufficient to form the first-to-form germanide of the refractory metal. The resulting contact is stable, has a very low contact resistance and may be subjected to later high temperature processing steps without affecting its characteristics.
REFERENCES:
patent: 3914785 (1975-10-01), Ketchow
patent: 3987480 (1976-10-01), Diguet et al.
patent: 4011583 (1977-03-01), Levinstein et al.
patent: 4188710 (1980-02-01), Davey et al.
patent: 4298403 (1981-11-01), Davey et al.
patent: 4398963 (1983-08-01), Stall et al.
patent: 4400221 (1983-08-01), Rahilly
Anderson, Jr. et al., "Development of Ohmic Contacts for GaAs Devices Using Epitaxial Ge Films," IEEE Journal of Solid-State Circuits, vol. SC-13, No. 4, Aug. 78, pp. 430-435.
Anderson, Jr., et al., "Laser Annealed Ta/Ge and Ni/Ge Ohmic Contacts to GaAs," IEEE Electron Device Letters, vol. EDL-2, No. 5, May 1981, pp. 115-117.
Sinha et al., "Sintered Ohmic Contacts to N- and P-Type GaAs," IEEE Transactions on Electron Devices, vol. ED-22, No. 5, May 19, 1975, pp. 218-224.
Rupprecht Hans S.
Tiwari Sandip
International Business Machines - Corporation
James Andrew J.
Kilgannon Thomas J.
Mintel William A.
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