Method for forming a surface relief pattern in a poly(olefin sul

Details Method for forming a surface relief pattern in a poly(olefin sul Method for forming a surface relief pattern in a poly(olefin sul

1976-07-30

1979-05-08

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427 43, 427273, 96 351, 96 362, 96115R, B05D 306

Patent

active

041537416

ABSTRACT:
This invention pertains to an electron beam resist method for forming a surface relief pattern in a poly(olefin sulfone) layer wherein the polymer layer is useful as a sputter etch mask for transferring the surface relief pattern into a metal layer. The surface relief pattern is formed using poly(3-methyl-1-cyclopentene sulfone) as the poly(olefin sulfone) layer and using a mixture of 2-methylcyclohexanone and 2-methylcyclohexanol or a mixture of benzene and 2-methylcyclohexanol as the developer for the poly(3-methyl-1-cyclopentene sulfone) layer.

REFERENCES:
patent: 3615956 (1971-10-01), Irving et al.
patent: 3799777 (1974-03-01), O'Keefe et al.
patent: 3884696 (1975-05-01), Bowden et al.
patent: 3964409 (1976-06-01), Himics et al.

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