Photoconductive member of amorphous germanium and silicon with n

Details Photoconductive member of amorphous germanium and silicon with n Photoconductive member of amorphous germanium and silicon with n

1984-09-06

1986-06-03

Goodrow, John L.

Radiation imagery chemistry: process, composition, or product th

Electric or magnetic imagery, e.g., xerography,...

Radiation-sensitive composition or product

430 65, 430 67, 430 84, 430 95, G03G 5082

Patent

active

045929793

ABSTRACT:
A photoconductive member comprises a substrate for photoconductive member and a light receiving layer having photoconductivity comprising an amorphous material containing silicon atoms and germanium atoms, said light receiving layer containing nitrogen atoms and having a first layer region, a third layer region and a second layer region with the nitrogen atom content in the layer thickness direction of C(1), C(3) and C(2), respectively, in the order from the substrate side (with the proviso that when C(3) cannot solely be the maximum and either one of C(1) and C(2) is zero, the other two are not zero and not equal to each other, or when C(3) is zero, the other two are not zero, or when none of C(1), C(2) and C(3) is zero, the three of C(1), C(2) and C(3) cannot be equal at the same time and C(3) cannot solely be the maximum).

REFERENCES:
patent: 4490453 (1984-12-01), Shirai et al.
patent: 4491626 (1985-01-01), Kawamura et al.

Affiliated with

Also associated with

Rating

Photoconductive member of amorphous germanium and silicon with n does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoconductive member of amorphous germanium and silicon with n, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoconductive member of amorphous germanium and silicon with n will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1232560