Projection lithography system and method using all-reflective op

Details Projection lithography system and method using all-reflective op Projection lithography system and method using all-reflective op

1996-05-01

1997-11-11

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

378 34, G03F 720

Patent

active

056867280

ABSTRACT:
A projection lithographic system that operates within the deep ultraviolet to vacuum ultraviolet region of the spectrum and uses an all-reflective optical arrangement to project a reduced image of a lithographic mask onto a semiconductor wafer. The all-reflective optical arrangement includes from six to eight reflective surfaces wherein each of the reflective surfaces is aspheric, The reflective surfaces are disposed along a common optical axis and are arranged not to interfere with the path of light as the light travel from the lithographic mask to the semiconductor wafer.

REFERENCES:
patent: 5222112 (1993-06-01), Terasawa et al.
patent: 5315629 (1994-05-01), Jewell et al.
patent: 5361292 (1994-11-01), Sweatt
patent: 5510230 (1996-04-01), Tennant et al.

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