Semiconductor switch device

Details Semiconductor switch device Semiconductor switch device

1975-07-25

1977-08-09

Zazworsky, John

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307252D, 307252N, 307305, H03K 1772

Patent

active

040413322

ABSTRACT:
A semiconductor switch device comprising a PNPN switch having an equivalent four-layer structure, a transistor, two impedance elements and a capacitive element, wherein the transistor and one of the impedance elements are connected in parallel with each other, the parallel circuit thus formed is connected between the P base and the N cathode of the PNPN switch, the capacitive element is connected between the base of the transistor and a terminal maintained at a constant potential, and the other impedance element is connected between the base and the emitter of the transistor, whereby the semiconductor switch has a high tolerance to dv/dt and can be closed with high sensitivity.

REFERENCES:
patent: 3714443 (1973-01-01), Ogawa

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