Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-12-27
1996-05-07
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257754, 257769, 257770, 257752, 257382, H01L 2946, H01L 2954
Patent
active
055149103
ABSTRACT:
A semiconductor device comprises a silicon via-plug within a fine via-hole in direct contact with an inner wall of the via-hole. A metal silicide layer is formed between an interconnection layer and the silicon plug as well as between the silicon plug and a diffused layer formed in a substrate. Shape defects and excessive stresses formed within a fine via-hole are reduced because the via-hole is filled with the silicon plug substantially without a metallic film or a metal silicide film on a sidewall. The metal silicide film is formed by a heat treatment through silicidation reaction.
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Limanek Robert P.
NEC Corporation
Williams Alexander Oscar
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