Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1994-04-29
1996-05-07
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257757, 257764, 257767, 257770, 257924, H01L 2348, H01L 2352, H01L 2940
Patent
active
055149081
ABSTRACT:
Methods of forming, in an integrated circuit, aluminum-silicon contacts with a barrier layer is disclosed. The barrier layer is enhanced by the provision of titanium oxynitride layers adjacent the silicide film formed at the exposed silicon at the bottom of the contact. The titanium oxynitride may be formed by depositing a low density titanium nitride film over a titanium metal layer that is in contact with the silicon in the contact; subsequent exposure to air allows a relatively large amount of oxygen and nitrogen to enter the titanium nitride. A rapid thermal anneal (RTA) both causes silicidation at the contact location and also results in the oxygen and nitrogen being gettered to what was previously the titanium/titanium nitride interface, where the oxygen and nitrogen react with the titanium metal and nitrogen in the atmosphere to form titanium oxynitride. The low density titanium nitride also densifies during the RTA. Alternative embodiments are also disclosed in which the silicide is formed first, prior to the formation of additional titanium oxynitride by air exposure and RTA, or by sputter deposition. Each of these processes produces a high-quality barrier contact structure overlying a silicide film, where the barrier structure includes titanium oxynitride and titanium nitride.
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Liao De-Dul
Lin Yih-Shung
Anderson Rodney M.
Guay John
Jackson, Jr. Jerome
Jorgenson Lisa K.
Lager Irena
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