Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1995-01-18
1996-05-07
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257231, 257232, 257240, 257243, H01L 27148, H01L 29768
Patent
active
055148867
ABSTRACT:
The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.
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Lavine James P.
Stevens Eric G.
Eastman Kodak Company
Leimbach James D.
Mintel William
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